2013年电气论坛第2次活动-富士电机功率器件学术讲座(续)

发布日期:2013-02-26来源:9159金沙游戏场发布者:系统管理员访问量:165

IGBT Modules and Applications
时间:2013.03.01—03(周五至周日),上午9点至11点
地点:电机工程楼408
讲座内容:本次为系列讲座下半部分,内容包括

        Power Electronics and Power Devices
        Parallel Connection
        Series Connection
        Snubber Circuit
        Electro Magnetic Compatibility
        Drive Circuit
        Short Circuit Protection
        Loss Calculation
        Thermal Property
        Lifetime Limitations
        IGBT Power Loss Simulation

In the second stage will cover drive circuits for the modules, followed by short circuit protection. Then thermal management design will be discussed by applying loss calculation. The lecture will be ended with lifetime limitations issues.
主讲人:Dr. Naoto Fujishima
Dr. Naoto Fujishima is a General Manager of Device Technology Department in the Semiconductors Group of Fuji Electric Systems Co., Ltd. He received B.S. degree in Electrical Engineering from Hokkaido University, Japan, in 1985. Then he received M.S. and Ph.D. degrees both in Electrical and Computer Engineering form University of Toronto, Canada, in 1998 and 2003, respectively. Dr. Fujishima has over 20 years of experience in the field of power devices and power ICs. His expertise spans a wide variety of device design, circuit design, fabrication techniques, and characterization of power devices and power ICs. His current activities encompass design of IGBTs, power MOSFETs, diodes and power ICs. His current research interest is in the area of next-generation power semiconductor devices, such as IGBTs, super junction devices, and wide band gap devices, which contribute to energy saving for environmental protection. Dr. Fujishima is a technical committee member of PCIM-Asia, and has authored more than 20 scientific papers and held 41 U.S. patents and 26 Japanese patents, and is the receiver of a scientific award. After April, 2013, Dr. Naoto Fujishima will be a senior manager and a technical representative of Europe Research and Technology Center (ERTC) in Fuji Electric Europe GmbH, in Frankfurt Germany after completion of the General Manager of Device Development Department in the Semiconductors Group of Fuji Electric Co., Ltd.
 
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2013.02