2014年电气论坛第6次活动 - IGBT Modules and Applications

IGBT Modules and Applications

时间：2014.04.11—13（周五至周日），上午9点至11点

地点：电机工程楼408

讲座内容：本次为系列讲座上半部分，内容包括

In the first stage, starting from overall explanation of power electronics and power devices, parallel and series connections of IGBT modules will be discussed. Then snubber circuits will be explained as use of over-voltage protection. Overview of EMC issues will also be studied.

主讲人：Naoto Fujishima

Dr. Naoto Fujishima received B.S. degree in Electrical Engineering from Hokkaido University, Japan, in 1985. After the graduation, he joined Fuji Electric, Co., Ltd. Then he received M.S. and Ph.D. degrees both in Electrical and Computer Engineering from University of Toronto, Canada, in 1998 and 2003, respectively. He was transferred to Fuji Electric Europe GmbH (FEE) in Germany in 2013, and is currently the CTO of FEE as well as the General Manager of European Design and Technical Center of FEE.

Dr. Fujishima has over 20 years of experience in the field of power devices and power ICs. His expertise spans a wide variety of device design, circuit design, fabrication techniques, and characterization of power devices and power ICs. His current responsibilities include not only research activities of power electronics and power devices but also design of power semiconductor devices in the European area. His current research interests relate to the trend of market and technologies about power electronics and power semiconductor devices which contribute to future energy distribution.

Dr. Fujishima is a technical committee member of PCIM-Asia, and has authored more than 20 scientific papers and held 41 U.S. patents and 26 Japanese patents, and is the receiver of a scientific award.

欢迎各位老师、本科高年级及研究生同学积极参加！

9159金沙游戏场应用电子学系

2014.04