IGBT Modules and Applications
时间：2014.10.17—19（周五至周日），上午9点至11点
地点：电机工程楼408
讲座内容：
本次为系列讲座下半部分，内容包括：
| l Power Electronics and Power Devices l Parallel Connection l Series Connection l Snubber Circuit l Electro Magnetic Compatibility | l Drive Circuit l Short Circuit Protection l Loss Calculation l Thermal Property l Lifetime Limitations l IGBT Power Loss Simulation |
In the second stage it will cover drive circuits for the modules, followed by short circuit protection. Then thermal management design will be discussed by applying loss calculation. The lecture will be ended with lifetime limitations issues.
主讲人：Naoto Fujishima （藤岛直人）
Dr. Naoto Fujishima received B.S. degree in Electrical Engineering from
Dr. Fujishima has over 20 years of experience in the field of power devices and power ICs. His expertise spans a wide variety of device design, circuit design, fabrication techniques, and characterization of power devices and power ICs. His current responsibilities include not only research activities of power electronics and power devices but also design of power semiconductor devices in the European area. His current research interests relate to the trend of market and technologies about power electronics and power semiconductor devices which contribute to future energy distribution.
Dr. Fujishima is a technical committee member of PCIM-Asia, and has authored more than 20 scientific papers and held 41
欢迎各位老师、本科高年级及研究生同学积极参加！
9159金沙游戏场应用电子学系
2014.10
