2015年电气论坛第9次活动-IGBT module and Applications

IGBT module and Applications

时间：2015. 6. 23（周二），下午2点至4点半

地点：电机工程楼408

讲座内容：

1)    High Power Density and High Efficiency 7th Generation IGBT Module Realizing Compact Power Conversion Systems

2)    Development of 1700V Hybrid Module with Si-IGBT and SiC-SBD

3)    New standard 800A/750V IGBT module technology

4)    Low-Switching Noise and High-Efficiency Superjunction MOSFET

主讲人：

Li Jun     Mr. Li Jun graduated from South China University of Technology and received B.S.degree of mechanical engineering in 2003.From 2003 to 2009, he engaged in development of DC-DC switching power supply. Since 2009, he joined Fuji Electric (China) Co., Ltd as a design engineer of general inverter. From 2011, he got involved in building power semiconductor application team. His current endeavor related to various power range IGBT/IPM module applications, that involve general inverter, MV/SVG, A/C, Renewable Energy, EV/HEV etc.

Taku Takaku     Dr. Taku Takaku received his PhD degree in Energy Sciences from Tokyo Institute of Technology Japan, in 2005. Upon completion of his Doctorate, he continued in the Research Department at Tokyo Institute of Technology Japan. In 2006, he joined Fuji Electric Device Technology Co., Ltd. From 2009 to 2014, he worked with Fuji Electric Corp. of America as Manager of Applications Engineering. He is now working in Fuji Electric Co., Ltd from 2014 as a field application engineer.

Keiichi Higuchi     Mr. Keiichi Higuchi received the M.E. degrees in quantum and electronic engineering, from Tsukuba University, Ibaraki, Japan, in 2006. In 2006, he joined Fuji Electric Co., Ltd. He is currently developing an IGBT module for EV/HEV applications.

Toshiaki Sakata     Mr. Toshiaki Sakata has been involved in development of Si Power MOSFET devices for 12 years. He joined Fuji Electric Co., Ltd. in 2010. Currently, he is responsible for development of a next generation Superjunction MOSFET.

欢迎各位老师、本科高年级及研究生同学积极参加！

9159金沙游戏场应用电子学系

2015. 6