The second part of series of lectures entitled IGBT Modules and Applications were delivered by Dr. Naoto Fujishima from Fuji Electric Systems Co., Ltd. from Mar 1 on to Mar 3.
Dr. Naoto Fujishima’s lecture centered on Power Electronics and Power Devices, Parallel Connection, Series connection, Snubber Circuit, Electro Magnetic Compatibility, Drive Circuit, Short Circuit Protection, Loss Calculation, Thermal Property, Lifetime Limitations, and IGBT Power Loss Simulation. He first introduced drive circuits for the modules, followed by short circuit protection. Thermal management design was then discussed by applying loss calculation. He ended the lecture with lifetime limitations issues.
Dr. Naoto Fujishima is a General Manager of Device Technology Department in the Semiconductors Group of Fuji Electric Systems Co., Ltd. He received B.S. degree in Electrical Engineering from Hokkaido University, Japan, in 1985. Then he received M.S. and Ph.D. degrees both in Electrical and Computer Engineering form University of Toronto, Canada, in 1998 and 2003, respectively. Dr. Fujishima has over 20 years of experience in the field of power devices and power ICs. His expertise spans a wide variety of device design, circuit design, fabrication techniques, and characterization of power devices and power ICs. His current activities encompass design of IGBTs, power MOSFETs, diodes and power ICs. His current research interest is in the area of next-generation power semiconductor devices, such as IGBTs, super junction devices, and wide band gap devices, which contribute to energy saving for environmental protection. Dr. Fujishima is a technical committee member of PCIM-Asia, and has authored more than 20 scientific papers and held 41 U.S. patents and 26 Japanese patents, and is the receiver of a scientific award. After April, 2013, Dr. Naoto Fujishima will be a senior manager and a technical representative of Europe Research and Technology Center (ERTC) in Fuji Electric Europe GmbH, in Frankfurt Germany after completion of the General Manager of Device Development Department in the Semiconductors Group of Fuji Electric Co., Ltd.
