The 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), jointly hosted by Zhejiang University and China Advanced Semiconductor Industry Innovation Alliance, was held on May 19-23, 2019 in Shanghai, China. This year’s conference attracted over 600 attendees from around the world as well as many exhibitors from fields related to power semiconductors.
On the opening ceremony, Prof. Kuang Sheng, general chair of ISPSD and dean of the College of Electrical Engineering of Zhejiang University, made an opening remark. He extended his warm welcome to every participant. “Since its first meeting in Tokyo 31 years ago, ISPSD has established its name as the premium technical conference in our field. It has become the most important platform where the power device community exchange ideas and report the most up-to-date technical findings.” Prof. Sheng said, “ISPSD 2019 is the 31st ISPSD conference. This is also the first time ISPSD is held in mainland China. In recent years, China has witnessed rapid development of power devices and ICs in education, research and industry.”
Prof. Kevin Chen, the Technical Program Committee Chair and professor of the Hong Kong University of Science and Technology, reported on paper submission and acceptance.
Prof. John Shen, general chair of 30th ISPSD and professor of Illinois Institute of Technology announced that 2 distinguished colleagues were inducted to be members of the ISPSD Hall of Fame. Alex Lidow received the honor for his contributions to silicon and GaN power device technology. Don Disney honored for his contributions to power IC technology, and his leadership role in organizing ISPSD conferences.
Prof. Wai Tung Ng, the Technical Program Committee Chair of 30th ISPSD and professor from the University of Toronto, announced that Denso Corporation from Japan won “Ohmi Best Paper Award”. The paper is titled “Deep-P Encapsulated 4H-SiC Trench MOSFETs with Ultra Low Ron Qgd”.
The conference technical program started with four invited plenary presentations and was followed by 11 technical sessions which were single session conference last for four days. The sessions involving all areas of power semiconductor devices and power integrated circuits were made up of 46 oral and 79 poster presentations selected from 299 abstracts among 24 different countries.
On the closing ceremony, Prof. Kuang Sheng comprehensively summarized the achievements of the conference. Prof. Kevin Chen awarded “ISPSD 2019 Charitat Award for the Best Young Researcher” to the winners Wei Jia Zhang from the University of Toronto, Canada and Takuya Maeda from Kyoto University, Japan.
At the meeting handover ceremony, Dr. Oliver H?berlen from Infineon, general chair of the 32nd ISPSD, reported on the progress of the preparations for the next year's conference and invited the participants to attend the next event in Vienna, Austria in 2020. The ISPSD conference flag was handed over by the current general chair Kuang SHENG to Dr. Oliver H?berlen, marking the successful conclusion of the conference and the formal start of the next session.
ISPSD is the premier forum for technical discussions in all areas of power semiconductor devices, power integrated circuits, their hybrid technologies and applications. The conference rotates on a four-year cycle among Europe, Japan, North America and other areas across the world.
